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 Freescale Semiconductor Technical Data
Document Number: MMG20271H Rev. 0, 12/2010
Enhancement Mode pHEMT Technology (E-pHEMT)
High Linearity Amplifier
The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain. Features * Frequency: 1500--2700 MHz * Noise Figure: 1.7 dB @ 2140 MHz * P1dB: 27.5 dBm @ 2140 MHz * Small--Signal Gain: 16 dB @ 2140 MHz * Third Order Output Intercept Point: 42 dBm @ 2140 MHz * Single 5 Volt Supply * Supply Current: 180 mA * 50 Ohm Operation (some external matching required) * Low Cost QFN Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
MMG20271HT1
1500-2700 MHz, 16 dB 27.5 dBm E-pHEMT
CASE 2131-01 QFN 3x3 PLASTIC
Table 1. Typical Performance (1)
Characteristic Noise Figure Input Return Loss (S11) Output Return Loss (S22) Small--Signal Gain (S21) Power Output @ 1dB Compression Third Order Input Intercept Point Third Order Output Intercept Point Symbol NF IRL ORL Gp P1db IIP3 OIP3 1500 MHz 2.0 --16 --20 18 27 22 40 2140 MHz 1.7 --14 --22 16 27.5 26 42 2700 MHz 1.9 --17 --17 14 28 28 42 Unit dB dB dB dB dBm dBm dBm
Table 2. Maximum Ratings
Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VDD IDD Pin Tstg TJ Value 6 400 25 --65 to +150 150 Unit V mA dBm C C
2. For reliable operation, the junction temperature should not exceed 150C.
1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency.
Table 3. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 96C, 5 Vdc, 190 mA, no RF applied Symbol RJC Value (3) 38 Unit C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MMG20271HT1 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (VDD = 5 Vdc, 2140 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Small--Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Input Intercept Point Third Order Output Intercept Point Reverse Isolation (S12) Noise Figure Supply Current (1) Supply Voltage
(1)
Symbol Gp IRL ORL P1dB IIP3 OIP3 |S12| NF IDD VDD
Min 13.9 -- -- -- -- -- -- -- 148 --
Typ 16 --14 --22 27.5 26 42 --23 1.7 180 5
Max -- -- -- -- -- -- -- -- 227 --
Unit dB dB dB dBm dBm dBm dB dB mA V
1. For reliable operation, the junction temperature should not exceed 150C.
Table 5. Functional Pin Description
Name RFin
(1)
Pin Number 3
Description RF input for the power amplifier. RFin has an RF choke to ground internal to the package. No external blocking is necessary unless externally applied DC is present on the trace. RF output for the power amplifier. This pin is DC coupled and requires a DC blocking capacitor. Bias voltage and current adjust pin. The center metal base of the QFN package provides both DC and RF ground as well as the heat sink contact for the IC. VBA N.C. N.C. 12 N.C. N.C. RFin 1 2 3 4 5 6 N.C. N.C. N.C. (Top View) GND 11 10 9 8 7 RFout/VDD RFout/VDD N.C.
RFout/ VDD VBA GND
8, 9 12 Backside Center Metal
1. The RF input has a DC path to ground and therefore may require an external decoupling capacitor.
Figure 1. Pin Connections
Table 6. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 1 Package Peak Temperature 260 Unit C
MMG20271HT1 2 RF Device Data Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 2140 MHz
R2 VSUPPLY R1
C7 12 11 10
C3 L2 Z3 L1 Z4 C6
C5
1
BIAS CIRCUIT
9
RF OUTPUT C2
2 RF INPUT
8
Z1 C1
Z2
3
7
4 Z1 Z2
5
6 Z3 Z4 0.041 x 0.030 Microstrip 0.198 x 0.021 Microstrip
0.139 x 0.021 Microstrip 0.026 x 0.011 Microstrip
Figure 2. MMG20271HT1 Test Circuit Schematic
Table 8. MMG20271HT1 Test Circuit Component Designations and Values
Part C1 C2, C3, C7 C4 C5 C6 L1, R2 (1) L2 R1 PCB Description 1.8 pF Chip Capicitor 18 pF Chip Capacitors Component Not Used 0.1 F Chip Capacitor 1.5 pF Chip Capacitor 0 , 1 A Chip Resistor 23 nH Chip Inductor 220 , 1/16 W Chip Resistor 0.010, r = 3.38, Multilayer GRM155R61A104K01D GJM1555C1H1R5BB01D ERJ2GE0R00X 0402CS--23NXGL RC0402FR--07220RL IS680--338 Murata Murata Panasonic Coilcraft Yageo Isola Part Number GJM1555C1H1R8BB01D GJM1555C1H180GB01D Manufacturer Murata Murata
1. Location L1 can be an inductor, resistor or jumper depending on frequency.
MMG20271HT1 RF Device Data Freescale Semiconductor 3
50 OHM APPLICATION CIRCUIT: 2140 MHz
VDD 5 V
VBA R2 R1 RFIN C7
C5 C4* C3 L2 C1 L1 C2 C6
RFOUT
QFN 3x3--12A Rev. 0
*C4 component not used.
Figure 3. MMG20271HT1 Test Circuit Component Layout
Table 8. MMG20271HT1 Test Circuit Component Designations and Values
Part C1 C2, C3, C7 C4 C5 C6 L1, R2 (1) L2 R1 PCB Description 1.8 pF Chip Capicitor 18 pF Chip Capacitors Component Not Used 0.1 F Chip Capacitor 1.5 pF Chip Capacitor 0 , 1 A Chip Resistor 23 nH Chip Inductor 220 , 1/16 W Chip Resistor 0.010, r = 3.38, Multilayer GRM155R61A104K01D GJM1555C1H1R5BB01D ERJ2GE0R00X 0402CS--23NXGL RC0402FR--07220RL IS680--338 Murata Murata Panasonic Coilcraft Yageo Isola Part Number GJM1555C1H1R8BB01D GJM1555C1H180GB01D Manufacturer Murata Murata
1. Location L1 can be an inductor, resistor or jumper depending on frequency. (Component Designations and Values table repeated for reference.)
MMG20271HT1 4 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 2140 MHz
18 Gp, SMALL--SIGNAL GAIN (dB) --13
17
IRL, INPUT RETURN LOSS (dB)
TC = --40C 25C
--14 TC = --40C --15 85C 25C VDD = 5 Vdc --17 2000 2075 2150 f, FREQUENCY (MHz) 2225 2300
16 85C 15 VDD = 5 Vdc 14 2000 2075 2150 f, FREQUENCY (MHz) 2225 2300
--16
Figure 4. Small-Signal Gain (S21) versus Frequency
--16 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 29
Figure 5. Input Return Loss (S11) versus Frequency
--18 TC = 85C --20 25C --22 --40C --24 2000 VDD = 5 Vdc 2075 2150 f, FREQUENCY (MHz) 2225 2300
28
TC = --40C 25C
27
85C
26 VDD = 5 Vdc 25 2040 2090 2140 f, FREQUENCY (MHz) 2190 2240
Figure 6. Output Return Loss (S22) versus Frequency
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 45 TC = --40C 25C 41 85C 39 VDD = 5 Vdc 37 2040 2090 2140 f, FREQUENCY (MHz) 2190 2240 0 2000 NF, NOISE FIGURE (dB) 2.4
Figure 7. P1dB versus Frequency
TC = 85C 1.8 25C 1.2 --40C
43
0.6 VDD = 5 Vdc 2075 2150 f, FREQUENCY (MHz) 2225 2300
Figure 8. Third Order Output Intercept Point versus Frequency
Figure 9. Noise Figure versus Frequency
MMG20271HT1 RF Device Data Freescale Semiconductor 5
50 OHM TYPICAL CHARACTERISTICS: 2140 MHz
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) --20
--30
VDD = 5 Vdc, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
--40 TC = 85C --50 25C --60 16 --40C
18
20 Pout, OUTPUT POWER (dBm)
22
24
Figure 10. Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power
MMG20271HT1 6 RF Device Data Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 1900 MHz
R2 VSUPPLY R1
C7 12 11 10
C3 L2 Z3 L1 Z4 C6
C5
1
BIAS CIRCUIT
9
RF OUTPUT C2
2 RF INPUT
8
Z1 C1
Z2
3
7
4 Z1 Z2
5
6 Z3 Z4 0.041 x 0.030 Microstrip 0.175 x 0.021 Microstrip
0.166 x 0.021 Microstrip 0.026 x 0.011 Microstrip
Figure 11. MMG20271HT1 Test Circuit Schematic
Table 9. MMG20271HT1 Test Circuit Component Designations and Values
Part C1, C6 C2, C3, C7 C4 C5 L1 L2 R1 R2 PCB Description 1.6 pF Chip Capicitors 18 pF Chip Capacitors Component Not Used 0.1 F Chip Capacitor 1 nH Chip Inductor 23 nH Chip Inductor 220 , 1/16 W Chip Resistor 0 , 1 A Chip Resistor 0.010, r = 3.38, Multilayer GRM155R61A104K01D 0402CS--1N0XGL 0402CS--23NXGL RC0402FR--07220RL ERJ2GE0R00X IS680--338 Murata Coilcraft Coilcraft Yageo Panasonic Isola Part Number GJM1555C1H1R6BB01D GJM1555C1H180GB01D Manufacturer Murata Murata
MMG20271HT1 RF Device Data Freescale Semiconductor 7
50 OHM APPLICATION CIRCUIT: 1900 MHz
VDD 5 V
VBA R2 R1 RFIN C1 C7 L1 *C4 component not used.
C5 C4* C3 L2 C6 C2
RFOUT
QFN 3x3--12A Rev. 0
Figure 12. MMG20271HT1 Test Circuit Component Layout
Table 9. MMG20271HT1 Test Circuit Component Designations and Values
Part C1, C6 C2, C3, C7 C4 C5 L1 L2 R1 R2 PCB Description 1.6 pF Chip Capicitors 18 pF Chip Capacitors Component Not Used 0.1 F Chip Capacitor 1 nH Chip Inductor 23 nH Chip Inductor 220 , 1/16 W Chip Resistor 0 , 1 A Chip Resistor 0.010, r = 3.38, Multilayer GRM155R61A104K01D 0402CS--1N0XGL 0402CS--23NXGL RC0402FR--07220RL ERJ2GE0R00X IS680--338 Murata Coilcraft Coilcraft Yageo Panasonic Isola Part Number GJM1555C1H1R6BB01D GJM1555C1H180GB01D Manufacturer Murata Murata
(Component Designations and Values table repeated for reference.)
MMG20271HT1 8 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 1900 MHz
19 Gp, SMALL--SIGNAL GAIN (dB) --5
18
IRL, INPUT RETURN LOSS (dB)
--10
17
--15
16 VDD = 5 Vdc 15 1750 1825 1900 f, FREQUENCY (MHz) 1975 2050
--20 VDD = 5 Vdc --25 1750 1825 1900 f, FREQUENCY (MHz) 1975 2050
Figure 13. Small-Signal Gain (S21) versus Frequency
0 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 29
Figure 14. Input Return Loss (S11) versus Frequency
--10
28
--20
27
--30 VDD = 5 Vdc --40 1750 1825 1900 f, FREQUENCY (MHz) 1975 2050
26 VDD = 5 Vdc 25 1800 1850 1900 f, FREQUENCY (MHz) 1950 2000
Figure 15. Output Return Loss (S22) versus Frequency
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 45 2.4
Figure 16. P1dB versus Frequency
NF, NOISE FIGURE (dB) VDD = 5 Vdc 1 MHz Tone Spacing
43
2.2
41
2
39
1.8 VDD = 5 Vdc
37 1800
1850
1900 f, FREQUENCY (MHz)
1950
2000
1.6 1750
1825
1900 f, FREQUENCY (MHz)
1975
2050
Figure 17. Third Order Output Intercept Point versus Frequency
Figure 18. Noise Figure versus Frequency
MMG20271HT1 RF Device Data Freescale Semiconductor 9
50 OHM APPLICATION CIRCUIT: 2700 MHz
R2 VSUPPLY R1
C7 12 11 10
C3 L2 Z3 L1 Z4 C6
C5
1
BIAS CIRCUIT
9
RF OUTPUT C2
2 RF INPUT
8
Z1 C1
Z2
3
7
4 Z1 Z2
5
6 Z3 Z4 0.041 x 0.030 Microstrip 0.091 x 0.021 Microstrip
0.056 x 0.021 Microstrip 0.026 x 0.011 Microstrip
Figure 19. MMG20271HT1 Test Circuit Schematic
Table 10. MMG20271HT1 Test Circuit Component Designations and Values
Part C1 C2, C3, C7 C4 C5 C6 L1, R2 (1) L2 R1 PCB Description 1.8 pF Chip Capicitor 18 pF Chip Capacitors Component Not Used 0.1 F Chip Capacitor 1.5 pF Chip Capacitor 0 , 1 A Chip Resistor 23 nH Chip Inductor 220 , 1/16 W Chip Resistor 0.010, r = 3.38, Multilayer GRM155R61A104K01D GJM1555C1H1R5BB01D ERJ2GE0R00X 0402CS--23NXGL RC0402FR--07220RL IS680--338 Murata Murata Panasonic Coilcraft Yageo Isola Part Number GJM1555C1H1R8BB01D GJM1555C1H180GB01D Manufacturer Murata Murata
1. Location L1 can be an inductor, resistor or jumper depending on frequency.
MMG20271HT1 10 RF Device Data Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 2700 MHz
VDD 5 V
VBA R2 R1 RFIN C1 C7 L1 *C4 component not used.
C5 C4* C3 L2 C6 C2
RFOUT
QFN 3x3--12A Rev. 0
Figure 20. MMG20271HT1 Test Circuit Component Layout
Table 10. MMG20271HT1 Test Circuit Component Designations and Values
Part C1 C2, C3, C7 C4 C5 C6 L1, R2 (1) L2 R1 PCB Description 1.8 pF Chip Capicitor 18 pF Chip Capacitors Component Not Used 0.1 F Chip Capacitor 1.5 pF Chip Capacitor 0 , 1 A Chip Resistor 23 nH Chip Inductor 220 , 1/16 W Chip Resistor 0.010, r = 3.38, Multilayer GRM155R61A104K01D GJM1555C1H1R5BB01D ERJ2GE0R00X 0402CS--23NXGL RC0402FR--07220RL IS680--338 Murata Murata Panasonic Coilcraft Yageo Isola Part Number GJM1555C1H1R8BB01D GJM1555C1H180GB01D Manufacturer Murata Murata
1. Location L1 can be an inductor, resistor or jumper depending on frequency. (Component Designations and Values table repeated for reference.)
MMG20271HT1 RF Device Data Freescale Semiconductor 11
50 OHM TYPICAL CHARACTERISTICS: 2700 MHz
16 Gp, SMALL--SIGNAL GAIN (dB) --5
15
IRL, INPUT RETURN LOSS (dB)
--10
14
--15
13 VDD = 5 Vdc 12 2550 2625 2700 f, FREQUENCY (MHz) 2775 2850
--20 VDD = 5 Vdc --25 2550 2625 2700 f, FREQUENCY (MHz) 2775 2850
Figure 21. Small-Signal Gain (S21) versus Frequency
--5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 29
Figure 22. Input Return Loss (S11) versus Frequency
--10
28
--15
27
--20 VDD = 5 Vdc --25 2550 2625 2700 f, FREQUENCY (MHz) 2775 2850
26 VDD = 5 Vdc 25 2600 2650 2700 f, FREQUENCY (MHz) 2750 2800
Figure 23. Output Return Loss (S22) versus Frequency
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 45 2.2
Figure 24. P1dB versus Frequency
NF, NOISE FIGURE (dB) VDD = 5 Vdc 1 MHz Tone Spacing
43
2
41
1.8
39
1.6 VDD = 5 Vdc
37 2600
2650
2700 f, FREQUENCY (MHz)
2750
2800
1.4 2550
2625
2700 f, FREQUENCY (MHz)
2775
2850
Figure 25. Third Order Output Intercept Point versus Frequency
Figure 26. Noise Figure versus Frequency
MMG20271HT1 12 RF Device Data Freescale Semiconductor
3.00
0.70
0.30 2.00 0.50 1.6 x 1.6 Solder Pad with Thermal Via Structure 3.40
Figure 27. PCB Pad Layout for QFN 3x3
MG01 YWZ
Figure 28. Product Marking
MMG20271HT1 RF Device Data Freescale Semiconductor 13
PACKAGE DIMENSIONS
MMG20271HT1 14 RF Device Data Freescale Semiconductor
MMG20271HT1 RF Device Data Freescale Semiconductor 15
MMG20271HT1 16 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software * .s2p File Development Tools * Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time failure analysis is limited to electrical signature analysis. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Dec. 2010 * Initial Release of Data Sheet Description
MMG20271HT1 RF Device Data Freescale Semiconductor 17
How to Reach Us:
Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2010. All rights reserved.
MMG20271HT1
Rev. 18 0, 12/2010 Document Number: MMG20271H
RF Device Data Freescale Semiconductor


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